Abstract
Semi-empirical hole and electron mobility models with temperature dependence have been proposed for circuit simulation as well as for process characterization. These models are based on the universal dependence of low field mobility on the effective transverse field and cover a wide range of oxide thickness as well as of temperature. The accuracy of our models is justified by comparing them with experimental work reported in the literature as well as that obtained in our laboratory. They are accurate and physical enough to be suited for the circuit simulation of modern VLSI CMOS circuits with gate oxide thickness less then 400 /spl Aring/ in the temperature range of 250-400 K. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
