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Abstract
Temperature dependent He-irradiation-induced ion-beam mixing between amorphous silicon oxycarbide (SiOC) and crystalline Fe was examined with a transmission electron microscope (TEM) and via Rutherford backscattering spectrometry (RBS). The Fe marker layer (7.2 ± 0.8 nm) was placed in between two amorphous SiOC layers (200 nm). The amount of ion-beam mixing after 298, 473, 673, 873, and 1073 K irradiation was investigated. Both TEM and RBS results showed no ion-beam mixing between Fe and SiOC after 473 and 673 K irradiation and a very trivial amount of ion-beam mixing (~2 nm) after 298 K irradiation. At irradiation temperatures higher than 873 K, the Fe marker layer broke down and RBS could no longer be used to quantitatively examine the amount of ion mixing. The results indicate that the Fe/SiOC nanocomposite is thermally stable and tends to demix in the temperature range from 473 to 673 K. For application of this composite structure at temperatures of 873 K or higher, layer stability is a key consideration.
Highlights
IntroductionOne example is ion-beam mixing during ion irradiation, which is often observed at interfaces of systems containing two or more different materials [2,3,4]
Ion-solid interactions lead to a significant local rearrangement of atoms [1]
The results indicate the amorphous nature of the silicon oxycarbide (SiOC) layers and the body‐centered cubic (BCC) structure of the Fe marker layer
Summary
One example is ion-beam mixing during ion irradiation, which is often observed at interfaces of systems containing two or more different materials [2,3,4]. The ion-beam mixing process is affected by irradiation parameters such as ion species, dose, and temperature, and materials properties including heat of mixing and cohesive energy [7,11]. This is evidenced by significant ion-beam mixing behavior differences in two solid systems (Au on Cu and W on Cu), which have nearly an identical atomic number, atomic mass, and atomic density [12].
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