Temperature-dependent Hall analysis of carbon-doped GaAs

Abstract

The temperature dependence of the electrical properties, such as hole concentration, Hall mobility and resistivity of carbon-doped GaAs epilayers over a wide range of doping levels has been investigated. The carbon-doped GaAs epilayers have been grown by low pressure metalorganic chemical vapor deposition. The electrical properties have been obtained by Hall measurements. Experimental data on the carrier mobility, Hall effect, and resistivity over a wide temperature range have been analyzed and possible scattering mechanisms have been explained. Our experimental data show that the ionized impurity scattering tend to be dominant at temperatures below 100 K, while the lattice scattering as well as the ionized impurity scattering plays an important role at temperatures above 100 K. The dependence of the electrical on the doping levels has also been studied. In the case of heavily C-doped GaAs, the mobility curves are nearly flat at temperatures below 100 K and the mobility decreases as temperature increases above 100 K. The reason is that the degenerate conduction occurs at high doping level. The degenerate conduction begins at the hole concentration of about 2 × 10 18 cm −3 at 77 K and at room temperature.