Abstract
The temperature dependence of pulsed neutron and flash X-ray radiation effects was studied in GaAs MMICs (monolithic microwave integrated circuits). Above room temperature the long-term current transients are dominated by electron trapping in previously existing defects. At low temperatures in the range 126 to 259 K, neutron-induced lattice damage appears to play an increasingly important role in producing long-term current transients. >
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