Abstract
The static electron velocity-field characteristics for n-In0.53Gan0.47AS have been measured at temperatures from 95 K to 300 K over a range of electric field strengths from about 10 kV/cm to beyond 100 kV/cm. The velocity decreases monotonically with increasing electric field at all temperatures over the range of field strengths investigated. The electron velocity-field curves for In0.53Ga0.47As exhibit a larger peak-to-valley ratio, lower high-field velocity, and a smaller high-field temperature dependence than those for GaAs measured using the same experimental technique.
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