Temperature dependent electron-beam-induced-current investigation of electronic damages in silicon due to reactive ion etching

Abstract

The damage introduced by reactive ion etching in silicon was investigated by the planar-electron-beam-induced-current (PEBIC) method. A reduction of the EBIC signal in the etched areas is detected and studied of temperature dependency in the range of 5 K<T<300 K. The EBIC contrast between etched and unetched areas increases with decreasing temperature. Our results are interpreted by a reduction of the net acceptor dopant impurity near the etched surface.