Abstract
Dark electrical resistivity, space-charge-limited (SCL) current and photoconductivity measurements were carried out on Ga0.75In0.25Se single crystals. Analysis of the dark resistivity measurements revealed the presence of one level with activation energy of 0.10eV. Current–voltage characteristics showed that both ohmic and SCL characters exhibit in 180–300K range. Analysis of the experimental data in the SCL region resulted with a trap level at 0.11eV above the valence band. Photoconductivity measurements were performed at different light intensities in the temperature range of 150–300K. Behavior of the recombination mechanism in the crystal was brought out as sublinear recombination from the dependence of photocurrent on illumination intensity. Moreover, obtained activation energies were compared with the results of other experimental techniques applied to Ga0.75In0.25Se crystals in literature.
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