Temperature Dependent Electrical Characteristics Of Cu∕CuS∕n-Si∕Au-Sb Structure Deposited By SILAR Method

Abstract

We have reported a study of the I‐V characteristics of Cu/CuS/n‐Si/Au‐Sb sandwich structure in a wide temperature range of 80–300 K by a step of 20 K, which are prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method. A decrease in the barrier height, an increase in the ideality factor and a nonlinearity in the activation energy plot with a decrease in temperature have been seen. The ideality factor and barrier height values as a function of the sample temperature have been attributed to the presence of the lateral inhomogeneities of the barrier height. The temperature dependence of the I‐V characteristics of the Cu/CuS/n‐Si/Au‐Sb structure can reveal the existence of Gaussian distribution. The mean barrier height and the Richardson constant values are obtained from the modified Richardson plot.