Abstract
Abstract Current-voltage ( I - V ) and capacitance-voltage ( C - V ) characteristics of AlSiO x pSi metal-insulator-semiconductor (MIS) solar cells were measured in the temperature range between 295 K and 375 K. The semilogarithmic plot of the dark forward current-voltage curves were found to be linear and the slope was almost independent of temperature in the intermediate voltage region. Consequently, the diode quality factor was strongly temperature dependent changing linearly with inverse temperature. A decrease in the zero-bias silicon band bending with increasing temperature found from the C - V characteristics was larger than the calculated values of the corresponding changes in the bulk fermi level and the silicon band gap. Analysis of the data indicated that predominant carrier transport mechanism of the solar cells in the intermediate bias voltage region investigated in this work was multistep tunnelling rather than the usual process of diffusion.
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