Abstract
The electrical and photo-sensing properties of horizontally-oriented interconnected carbon nanotube networks (CNT-NWs) prepared by means of a microwave plasma chemical vapor deposition sandwich-growth process are investigated. The temperature-dependent dark and illuminated current–voltage and transfer characteristics of CNT-NW-assisted devices are measured. Results show that the current–voltage characteristics of the devices exhibit nonlinear behavior, and the current can be further modulated by a gate voltage, revealing p-type semiconducting behavior with a device mobility of ~14.5cm2/V·s and an on-off current ratio of ~103. Moreover, when the CNT-NW-assisted devices are irradiated with 1.25–25μm infrared (IR) from 300 to 11K, the photo currents increase approximately 1.1- to 2.7-fold compared to the dark currents at ±2V bias voltage. Such results demonstrate that the presented CNT-NWs have high potential for IR photo-sensor applications.
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