Abstract
Thin films of Bi 3.25La 0.75Ti 3O 12 (BLT) were fabricated by pulsed-laser deposition. The ferroelectric fatigue and Raman measurements were carried out on the as-prepared, postannealed in air and postannealed in oxygen BLT films (BLT-1, BLT-2 and BLT-3, respectively). It was revealed that the BLT-2 films have the weakest fatigue-resistance and highest frequency shifted Raman vibration modes, indicating the highest oxygen vacancy concentration in the BLT-2 films. Based on the BLT-2 films, the temperature-dependent effect of oxygen vacancy on polarization switching is investigated. Generally, the coercive field ( E c) increases while the switched polarization ( P s) decreases monotonically with decreasing temperature. However, the remnant polarization ( P r) increases when the temperature decreases from 300 to 167 K, then decreases with further decreasing temperature. The results can be well explained using a model based on the temperature-dependent depth and shape of the domain wall-defect interaction potential well.
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