Abstract
Enhancement-mode GaN-on-Si HFETs for power switching application are investigated under fast switching and elevated ambient temperatures conditions. The switching characteristics are used to evaluate the dynamic on-state resistance at temperatures up to 175°C, while switching drain voltage up to 400V. The devices show a low increase of <25% in dynamic resistance when increasing the ambient temperature up to 125°C. However, differing from expectations, above this temperature a rapid increase of on-resistance up to 85% occurs. Such anomaly indicates the existence of thermally activated trapping processes. Trapping transients taken over a large temperature range and a wide range of off-state stressing time show that in parallel to the buffer trapping, with activation energy of 0.80±0.02eV, an additional de-trapping process with activation energy of 0.42±0.05eV occurs through increased leakage current over the temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
