Abstract
Temperature- and bias-dependent current measurements were performed on n+-GaAs∕p-GaAs1−xNx heterojunction diodes. The samples studied are in the dilute regime and contain less than 1.7% nitrogen with respect to arsenic. Current-voltage, thermally stimulated current, and current transient (after voltage change) measurements provide unique insight into the defect participation in carrier transport within the depletion region. We will present the data obtained from these measurements, which show an activation energy of 0.21eV and may be related to a key defect measured by capacitance transients in the literature.
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