Abstract
In this letter, we report on improved low noise NiGe/n-Ge (100) Schottky barrier diodes (SBDs) fabricated by post annealing of sputtered Ni films on germanium substrates. The results of x-ray diffraction and Raman spectroscopy confirm the formation of NiGe phase at elevated temperatures. Electrical behaviour of the SBDs at different temperatures have been investigated and compared. Experimental results indicate the presence of barrier inhomogeneity and low temperature I–V measurements were performed and the effect of operating temperature on barrier height was studied. The Schottky barrier heights were calculated and compared using current-voltage and capacitance-voltage methods. A low frequency noise measurement on SBDs showed typical 1/f noise behaviour. Study shows that NiGe can be used as a contact material for low leakage Ge-MOSFET applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
