Abstract

In this paper, we carried out a detailed characterization and evaluation of temperature sensitive on-resistance R ON (T) of Gallium Nitride (GaN) based High Electron Mobility Transistors (HEMT) through DC and low frequency S-parameters measurements. The measurements are carried out at different chuck temperatures (T chuck ) and the R ON (T) is calculated for different values of gate-source bias (V GS ) of AlN/GaN/AlGaN HEMT on silicon carbide (SiC) substrate. Knowing R ON (T) values for different geometries of the device, we present a practical and simplified method to evaluate the temperature dependent series contact resistance R se (T) and channel sheet resistance R sh (T) of the technology.

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