Abstract
Pulsed laser deposition (PLD) of (Pb,Sr)TiO3 (PSrT) film on Pt/SiO2/Si at low substrate temperatures (Ts), ranging from 300–450 °C, has been investigated. As Ts increases, the films reveal coarsening clusters, improved crystallization of the perovskite phase, distinct capacitance–electric field (C–E) hysteretic loops and a larger dielectric constant. The 350 °C-deposited film shows strong (100) preferred orientation and optimum dielectric properties with the dielectric constant of ∼620. The current density increases as the measurement temperature and the electric field increase. Moreover, PSrT films exhibit a strong negative temperature coefficient of resistance (NTCR) behavior at temperatures ranging from 100 to 390 °C.
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