Abstract
Continuous-wave operation of highly strained double quantum well vertical-cavity surface-emitting lasers (VCSELs) with active regions of GaInNAs and InGaAs emitting at 1.26 µm at room temperature has been realized by metal organic chemical vapour deposition. The proposed InGaAs VCSEL can operate at high temperatures and exhibits superior temperature stability. The degradation of output power of the 1.26 µm InGaAs VCSEL is approximately 2.8% after a 1000 h burn-in life test.
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