Abstract
We performed temperature-dependent cathodoluminescence (CL) mapping of InGaN epitaxial layers, for which the presence of potential barriers around threading dislocations was previously confirmed by photoluminescence (PL) mapping using scanning near-field optical microscopy. The dark spot contrast in the panchromatic CL intensity images decreased with increasing temperature owing to the activation of nonradiative recombination processes. The change in the distribution of monochromatic CL (MCL) intensity with increasing temperature was ascribed to a carrier diffusion process in which thermally activated carriers diffuse to the potential minima. The change in the MCL intensity images of the InGaN epitaxial layer with higher In composition at higher temperatures was remarkable, indicating that the carriers cannot readily move to the potential minima owing to the higher potential barrier. This tendency is consistent with the temperature dependence of the intensity ratio of the two emission components previously observed in macroscopic PL measurements.
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