Abstract
The current-voltage (I–V) characteristics of In/p-Si Schottkybarrier diodes have been determined in the temperature range 100–300 Kand have been interpreted based on the assumption of a Gaussiandistribution of barrier heights due to barrier height inhomogeneitiesthat prevail at the metal–semiconductor interface. The evaluation ofthe experimental I–V data reveals a decrease of zero-biasbarrier height but an increase of ideality factor n with decreasingtemperature. The inhomogeneities are considered to have Gaussiandistribution with a mean zero-bias barrier height of 0.630 eV andstandard deviation of 0.083 V at zero bias. Furthermore, the meanbarrier height and the Richardson constant values were obtained to be0.617 eV and 20.71 A K−2 cm−2, respectively, by means ofthe modified Richardson plot, ln (I0/T2)−(q2σs02/2k2T2) versus 1000/T.
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