Abstract
In this paper, analytical modeling of center channel potential has been performed for graded-channel gate-all-around (GC-GAA) junctionless field-effect transistor (JLFET). The three-dimensional (3D) Poisson’s equation has been solved to discover the center channel potential utilizing the parabolic approximation equation with excellent boundary conditions. The minimum center channel potential has been adopted to calculate the subthreshold current by the drift-diffusion method. The effect of high temperature and doping concentration on the center potential and subthreshold current has been investigated, and the results have been verified. The validity of the model has been verified using the ATLAS TCAD device simulator. The results reveal that the GC-GAA JLFET reduces the OFF-state leakage current with a high-graded abrupt junction inside the channel region. Hence, this finds many applications in low-power, high-speed, and high-density circuits.
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