Abstract
We present a temperature dependent analytical model for GaN HEMT with quaternary alloy AlxInyGazN barrier layer. HEMTs are also known as Heterojunction field effect transistors (HFETs). Change in the ambient temperature of device and the self-heating effects vary its threshold voltage and performance. We compare our calculated data with the available experimental data and find that the computed outcomes agree with the experimental observations existing in literature. Thereby, validating our claim that the proposed model might find use in the simulation of quaternary alloy based AlInGaN devices for various applications.
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