Abstract
An understanding of the physical mechanisms which govern carrier generation in a pulsed MOS capacitor is very important for analyzing the dynamic parameters such as carrier lifetime and diffusion length. In this paper we present a general equation which describes the decay of a MOS capacitor at different temperatures. The equation is a generalization of prior analyses of Heiman, Zerbst, and Schroder. The generalized temperature dependent MOS C‐t analysis was experimentally verified using internally gettered and nongettered samples.
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