Temperature dependences of surface recombination DC current–voltage characteristics in MOS structures

Abstract

Temperature dependences of recombination current at interface traps in MOS transistor structure are investigated using the Shockley–Read–Hall Recombination DC current–voltage (R-DCIV) characteristics. Results include the effects of energy distribution of the interface traps (discrete, constant and U-shaped energy distributions) on the temperature dependence of the base terminal current-vs-gate-voltage lineshape (IB–VGB), the peak current and voltage (IB-peak, VGB-peak) and their thermal activation energy EA, and the reciprocal slope n of the IB-peak vs base/drain (or base/source) p/n junction forward voltage VBD. Surface impurity concentration and oxide thickness are varied. Temperature dependence of EA, VGB-peak and n is small while IB-peak and R-DCIV linewidth, large. This small temperature dependence simplifies the experimental implementation and data analysis of R-DCIV methodology applied at room temperatures without using expensive temperature controlled wafer-probe station.