Temperature dependence of up-take and release of H in near surfaces of D+ ion implanted proton conducting oxide ceramics

Abstract

Temperature dependence of up-take and release of H in proton conducting ceramics (Y-doped BaCeO3) implanted with 10keV D2+ ions at room temperature has been studied by subsequent exposure to water vapor. It is found the concentration of D implanted decreases by exposure of the specimen to Ar gas including H2O vapor of 5.3ppm, while that of H absorbed in the projected range of the D2+ ions increases and reaches to the initial implantation concentration of D. The D–H exchange rate increases as the temperature is elevated from 295 to 323K. The enhancement in the D–H exchange rates is ascribed to thermal detrapping of both D and H.