Abstract
We have calculated the nonradiative Auger recombination rate as a function of temperature in InGaAsP. Inclusion of this process can explain the observed temperature dependence of threshold and carrier lifetime of both the 1.3- and 1.55-mm InGaAsP double-heterostructure lasers. The threshold calculations are carried out using the Halperin-Lax-Kane band model, Stern’s matrix element, and Beattie-Landsberg theory of Auger recombination. Evidence of the Auger recombination is provided by a sublinearity of the spontaneous emission as a function of injection current.
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