Abstract
Separate-confinement-heterostructure single-quantum-well (SCH-SQW) InGaAsP/InGaP structures were grown on a (100) GaAs substrate by liquid-phase epitaxy (LPE) and then buried-heterostructure (BH) lasers were fabricated after mesa etching. The output power of laser diodes could be cw-operated near 50 mW without any kink in the transverse single mode. The measured values of a charateristic temperature T0 for BH InGaAsP/InGaP lasers were around 100 K for ∼500 µm cavity length. This relatively low value compared to the AlGaAs/GaAs quantum-well lasers could be better explained in terms of carrier leakage over the heterojunction barrier rather than Auger recombination which is intrinsic to quaternary semiconductor materials.
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