Abstract
We have applied the break-junction technique to highly biepitaxial c-axis oriented YBa2Cu3O7 thin films with T C (ρ=0) = 91 K. Mechanically adjustable junctions with a good stability and tunneling current favored along the ab-planes have been realized. The conductance characteristics of these junctions show the presence of gap related maxima that move towards zero bias for increasing temperatures. Considering the misorientation angle α≈ 45 ° ± 5 ° of the junction, a maximum gap value at the Fermi level Δ ≈ 22 meV is inferred at T = 13 K. The temperature dependence of the gap related structures, shows a quasilinear behavior for T > 0.4 T C similar to that observed in c-axis oriented, S-I-N type YBa2Cu3O7 planar junctions.
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