Abstract
Doping superlattices show tunable optical and electrical properties due to the space charge induced separation of photoexcited or electrically injected carriers. We have investigated the tunable luminescence in GaAs doping superlattices of doping levels n=1×10 18cm −3 and n=4×10 18cm −3 as function of excitation density and sample temperature. The temperature dependence of the tunability was investigated in the range between 4 and 700K, and we found the critical transition temperatures T 0 at 90 and 460K for the low and high doped samples, respectively. The results verify the theoretical prediction concerning the transition temperature at which the luminescence changes from full to zero tunability.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
