Abstract
By a combination of electrical measurement, the Debye model and the basic theory of polarization, the strain of AlGaN barrier layer underneath the gate in two AlGaN/AlN/GaN HFETs at the same ratio of gate length (LG) to source-drain distance (LSD) but with different dimensions is investigated at temperatures from 300 K to 450 K. It is found that temperatures have important influence on this strain. Furthermore, the temperature dependence of the strain is found related to device dimensions, a phenomenon that can be explained by the Ohmic contact metal atoms diffusion nearby the Ohmic electrode and lattice mismatch underneath the gate electrode. This study is conducive to understanding the effect of temperatures on the polarization Coulomb field (PCF) scattering, which has been verified to be a significant scattering mechanism affecting the performance of AlGaN/AlN/GaN HFETs.
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