Abstract
GaAs single crystals have been indented by a Vickers indenter at room temperature and 77 K. Dislocations thereby introduced were studied using the weak-beam method of electron microscopy. The dislocations have a Burgers vector of (a/2) d 110 ¢ and are dissociated into two Shockley partials. The stacking-fault energy decreases from 43 mJ m m 2 at 923 K to 15 mJ m m 2 at 77 K.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
