Abstract
A model in which we interpret the observed temperature dependence of the relative intensities of symmetryallowed phonon-assisted exciton emission in Si and Ge is developed. The model is based on a splitting of the exciton ground state combined with different transition rates for the split exciton levels. Symmetry arguments are applied to reduce the relative transition rates for the various phonon-assisted transitions to a minimum number of parameters involving products of reduced matrix elements and energy denominators. If the parameters are determined by comparison with experiment, good quantitative agreement is achieved.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
