Abstract
Temperature dependence of the photoconductive lifetime has been studied in the temperature range 100°–360°K on n-type gallium arsenide partially compensated with copper. It is confirmed that in n-type gallium arsenide the electron lifetime is determined by the presence of two different levels: one is a recombination level at about the middle of the band gap and the other is an acceptor level near the valence band. The electron capture-cross-section of the acceptor level is estimated to be 10-22-2×10-23 cm2. From the magnitude of the hole capture-cross-section, the recombination level is presumed to be a donor.
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