Abstract
The temperature dependences of the optical absorption edges of Zn doped GaAs semiconductor crystals have been measured from 300 to 560 K. The temperature dependence of the optical absorption in the Urbach edges is adequately reproduced by a Bose-Einstein model. Analysis of experimental results gave us the opportunity to offer an explicit function of two arguments (photon energy and temperature) for the absorption coefficient of doped crystals in the Urbach edge region.
Highlights
IntroductionBasic materials of the A3B5 group (GaAs and GaP) are the main complex semiconductor crystals for today
Analysis of experimental results gave us the opportunity to offer an explicit function of two arguments - photon energy and temperature, for the absorption coefficient of doped crystals in the Urbach region
Basic materials of the A3B5 group (GaAs and GaP) are the main complex semiconductor crystals for today. They are widely used in modern optoelectronics: basic elements of IR optics, television technology and fiber optic communications
Summary
Basic materials of the A3B5 group (GaAs and GaP) are the main complex semiconductor crystals for today. They are widely used in modern optoelectronics: basic elements of IR optics, television technology and fiber optic communications. The optical properties of such doped crystals are hardly affected by powerful electromagnetic fields [1]. All this indicates to the prospect of using crystals of the A3B5 group as sensing elements of various fiber-optic sensors, which can be used in extreme conditions [3]
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