Abstract
We have investigated the temperature dependence of the transition from single phase films of GaN1—xAsx to phase separated layers, which show regions of hexagonal [0001] oriented GaN, cubic [111] oriented GaAs and hexagonal [0001] oriented GaN1—xAsx. We see a strong temperature dependence of the arsenic flux at which GaAs inclusions are first observed. Finally the intensity of blue emission observed in As-doped GaN samples decreases strongly with decreasing growth temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
