Abstract
We report a systematic investigation of the temperature dependence of electrical resistance behaviours in tri- and four-layer graphene interconnects. Nonlinear current–voltage characteristics were observed at different temperatures, which are attributed to the heating effect. With the resistance curve derivative analysis method, our experimental results suggest that Coulomb interactions play an essential role in our devices. The room temperature measurements further indicate that the graphene layers exhibit the characteristics of semiconductors mainly due to the Coulomb scattering effects. By combining the Coulomb and short-range scattering theory, we derive an analytical model to explain the temperature dependence of the resistance, which agrees well with the experimental results.
Highlights
Graphene has been a subject of intense research since it was discovered in 2004 because of its intriguing band Structure [1,2]
Bilayer graphene is reported to have a tunable bandgap [13,14] and trilayer graphene is a semimetal in the ideal case with a gatetunable overlapped bandgap [15]
We report a systematic investigation of the temperature dependence behaviour of the fourterminal electrical resistance in few-layer graphene (FLG) interconnects
Summary
Graphene has been a subject of intense research since it was discovered in 2004 because of its intriguing band Structure [1,2]. The energy-momentum relationship of graphene is found to be linear for low energies near the six corners of the two-dimensional (2D) hexagonal Brillouin zone [1,2,3,4], leading to a zero effective mass for electrons and holes [2,3,4,5]. Graphene is an excellent electronic material as it can be either a metal or semiconductor depending on the edge states, zigzag or armchair [7]. It exhibits superior mobility, with reported values in excess of 15,000 cm V−1 s−1 [1], which is superior to that of III-V semiconductors for highspeed device applications. Theoretical understanding and experimental investigations of FLG are still lacking for applications such as interconnect
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