Abstract
The electrical properties of MOS devices with high-k insulating BaTiO3 sol gel films fabricated onto p-Si substrates, were investigated by a variety of electrical techniques. The aim was to identify the temperature dependence of the electrical properties of the MOS devices. All samples exhibit a typical MOS behaviour. The density of interface states Dit was found to decrease with decreasing temperature and lies between 1 × 1011 eV−1 cm−2 at near midgap and 3 × 1012 eV−1 cm−2 near the gap edges. The bulk-trapped charges were calculated to be between 40 and 120 nCb cm−2. The samples depicted high dielectric constants reaching values of 120. The results revealed that the sol-gel technique creates effective microelectronic devices.
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