Abstract
A new mechanism describing the rise in the contact resistance ρc of ohmic contacts to n-n+-n++-GaAs(GaP, GaN, InP) structures with increasing measurement temperature T, experimentally observed in the temperature range 100–400 K, is suggested on the basis of a theoretical analysis of the temperature dependence of ρc. Good agreement between the experimental and theoretical ρc(T) dependences is obtained and explained for a case where there is a high density of dislocations (on which metallic shunts are localized) in the near-contact region of the semiconductor.
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