Temperature dependence of the character of AlN nucleation layer grown on SiC substrates by MOCVD

Abstract

The AlN layers were grown by metal-organic vapor phase epitaxy (MOVPE) on 3-inch (0001) 4HSiC, and the effects of growth temperature were investigated by atomic force microscopy, Raman scattering spectra and high-resolution X-ray diffraction measurements. The results showed that surface roughness was reduced by increasing the temperature for AlN layer. The results of X-ray double crystal diffraction showed that the AlN films with higher temperature exhibited smaller (004) and (105) rocking curve width, and while growth temperature reached 1120 °C, the full-width at half-maximum (FWHM) of the ω rocking curve (RC) was 420 arcsecond.