Abstract
SiC power MOSFETs show very promising electrical performance for efficient and reliable high temperature operation. This work presents a novel approach for the determination of the temperature dependence of SiC power MOSFET’s channel and drift resistance components in the on-state, which are extracted based on current-voltage (I-V) and capacitance-voltage (C-V) measurements without the need of data extrapolation. The results show that the channel resistance has weak, whereas the drift resistance has strong temperature dependence.
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