Temperature dependence of the c-axis drift mobility in 4H–SiC

Abstract

The electrical characteristics of 4H–SiC Schottky diodes were performed in the temperature range 80–700 K, in order to determine the temperature dependence of the drift mobility. At room temperature, a value of 724 cm 2/(V s) was found, which decreased to 48.6 cm 2/(V s) at 700 K. In the temperature range 200–700 K, a dependence of the mobility as T −3 was determined, that can be correlated to the presence of material defects.