Temperature dependence of the carrier mobility in Ag2Se layers grown on NaCl and SiOx substrates

Abstract

Electrical propertics of monocrystalline and polycrystalline silver selenide thin films have been investigated in the temperature range of −196 to +150°C. Epitaxial and randomly oriented Ag2Se layers have been grown by vacuum deposition on NaCl and SiOx substrates, respectively. Special attention was paid to changes of the “mobility” (n-type conductivity) with temperature including the polymorphic phase transformation region (from 100 to 140 °C). The measurements have been performed in both directions of the temperature variation and a difference was found in the temperature of the phase transformation (hysteresis) depending upon the heating or cooling down conditions. A typical mobility of about 1000 cm2/Vs was found at room temperature. Shape and differences in the slopes of the mobility variations have been discussed.