Abstract
The temperature dependence of the anomalous muonium hyperfine interaction has been measured in silicon between 5 K and 150/sup 0/K. The hyperfine parameters are observed to decrease with increasing temperature. This is argued to result from interaction of the anomalous muonium center with the silicon host phonons. Above 120/sup 0/K a rapid increase of the depolarization rate of the anomalous muonium with temperature is observed; these data are consistent with a Raman process causing the increased depolarization.
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