Temperature dependence of the anisotropy of the infrared dielectric properties and phonon-plasmon coupling in n-doped 4H-SiC

Abstract

Polarized infrared reflectivity spectroscopy is used to measure the temperature dependence of the anisotropy of the infrared dielectric properties and the coupling between phonon and plasmon modes in n-doped 4H-SiC. The advantage of polarized infrared spectroscopy over the commonly used Raman spectroscopy is that it enables dielectric, plasmonic, and transport properties to be probed along and perpendicular to the c-axis, which is impossible with Raman spectroscopy due to its selection rules. In addition, the infrared spectrum, comparatively rare for Raman spectroscopy, can be described at high temperatures with simple classical theory, providing more precise information on the properties of the material being measured. Analysis of the s- and p-polarized infrared reflectivity spectra of an n-doped 4H-SiC substrate shows that the strength and damping of the oscillators, the response of the bound electrons to an infrared excitation, the effective ion mass, and the transverse frequency and anharmonicity of the phonons of n-doped 4H-SiC are temperature-sensitive and strongly anisotropic. It also shows that the plasmonic properties of n-doped 4H-SiC, namely the relaxation time and the collective oscillation frequency of free electrons, are also highly anisotropic and, due to the long relaxation time of free electrons in the direction parallel to the c-axis, only the axial longitudinal phonon-plasmon modes split into low-frequency and high-frequency modes at temperatures above 700 K.