Abstract
The experimental results of silicon carbide (SiC) drift step recovery diodes (DSRDs) temperature dependence of injection electroluminescence (IEL) spectra were presented. It was shown that in the forward current range If = 0,1...1 A the DSRD-dies temperature was raised from 327 K to 546 K correspondingly. While the short-wavelength maximum of IEL spectra - λmax1 shifts from 392.4 to 402.1 nm and possesses dependence close to linear. On the basis of obtained calibration curves it is possible the non-contact temperature measuring of SiC-DSRDs by electroluminescence spectra at their operation in the generator of high voltage pulses.
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