Abstract

Previous research on terahertz optical rectification from zincblende semiconductors indicated that there was an enhancement of the resonant second-order nonlinear susceptibility near the bandgap in these materials. Because the bandgap of a semiconductor changes with temperature, it is important to study the resonant behavior of the second-order nonlinear susceptibility as a function of temperature near the bandgap. The authors report their recent studies of the temperature dependence of terahertz optical rectification from oriented zincblende crystals (GaAs and InP) near their bandgap. The results showed that an enhancement of the resonant second-order nonlinear susceptibility occurred when the incident photon energy was slightly higher than the bandgap of the zincblende crystal at different temperatures.

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