Abstract
AbstractResidual strains in thin films of 1.0 μm, 0.5 μm and 0.25 μm Cu capped with 24 nm Ta and a 62 nm Ta diffusion barrier were measured using x-rays during continuous temperature ramping. Cycles up to 300°C and 400°C were performed. At ambient temperature, the flow stresses after heating to 400°C were found to increase wth decreasing film thickness. The stresses were sufficiently high below 100°C to cause plastic yielding. The diffracted intensities from the in-plane and out-of-plane (111) planes were recorded with temperature and the intensity changes were attributed to the necessary dislocation density and distribution variation to accomodate the mismatch strain due to thermal expansion differences.
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