Temperature dependence of rapidly thermally annealed Ba0.6Sr0.4TiO3 thin film fabricated on platinized Si substrate

Abstract

Abstract Sol-gel prepared Ba0.6Sr0.4TiO3 (BST) thin films were prepared on platinized silicon substrate and annealed by rapid thermal annealing at temperatures ranging from 650 °C to 850 °C. X-ray diffraction, atomic force microscopy and electrical measurements were used to investigate the temperature dependence of the structural and physical properties of Ba0.6Sr0.4TiO3 thin film. The dielectric constants of BST samples annealed at 700 °C and 750 °C, measured at zero-bias electric field, are 166 and 193, respectively. It is found that all the prepared BST films show Ohmic-like conduction at low voltages except for the 650 °C annealed BST sample, for which Ohmic conduction covers the whole measured voltage range; BST films annealed at 700 °C, 750 °C and 800 °C demonstrate Poole–Frenkel emission conduction at high voltages, while BST film annealed at 850 °C presents Schottky emission behavior.