Abstract
The temperature dependence Raman scattering from m-plane GaN thin films grown on m-plane sapphire substrate by Molecular Beam Epitaxy (MBE) has been investigated. Three pieces of m-plane GaN films grown with different Ⅲ/Ⅴ ratios were studied by confocal micro-Raman spectrometer from -180 °C to 240 °C. Raman shift and the full width at half maximum (FWHM) were fitted by lorentzian line shape, which reveal the quality and compressive stress of sample. It’s obvious that the Raman shift and FWHM exhibit a quadratic dependence on temperature, and that the redshift of Raman peak position with increasing temperature should be due to anharmonic coupling to phonons of other branches, volume expansion or lattice dilation. Comparing the experiment data and calculated results, the three-phonons processes are dominant in the redshift of E1(LO) and E2(high).
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