Abstract
SIMS sputter depth profiles of 20 keV As implanted in Si and in thermally grown SiO 2 were determined at temperatures ranging from − 100 to + 290° C. 5 keV O + 2 ions striking the sample at near-normal incidence were used for sputter erosion. The characteristic decay lengths describing the exponential tails of impurity profiles were found to increase distinctly with increasing sample temperature. The results are interpreted in terms of radiation induced segregation of As at the SiO 2/Si interface formed during oxygen bombardment of Si.
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