Temperature dependence of photoreflectance in InAs/GaAs quantum dots

Abstract

Temperature dependent photoreflectance (PR) and photoluminescence experiments of the InAs/GaAs quantum dot (QD) structures were performed. At 20 K, effective band-gap transitions due to the InAs QDs, wetting layers, and GaAs buffer and cap layers were identified. Transition energies of the ground state and four excited states with nearly equal interlevel spacings (75–80 meV) were observed. The linewidth of the ground-state transition decreased as the temperature increased from 20 K to 100 K while the linewidth became broader at temperatures above 100 K. Energy features of the PR spectra originating from QDs and relating to the in-plane parabolic potentials were discussed.